maximum ratings rating symbol v alue unit collector?emitter voltage v ceo ? 150 vdc collector?base voltage v cbo ? 160 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 500 madc high voltage transistor thermal characteristics characteristic symbol max unit total device dissipation fr- 5 board (1) p d 225 mw t a =25 c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking m mbt5401lt1= 2l electrical characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage v (br)ceo vdc (i c = ?1.0 madc, i b = 0) ? 150 ? collector?base breakdown voltage v (br)cbo vdc (i c = ?100 adc, i e = 0) ? 160 ? emitter-base breakdown voltage v (br)ebo vdc (i e = ?10 adc,i c =0) -5.0 ? collector cutoff current i ces (v cb = ?120 vdc, i e = 0) ? ? 50 nadc (v cb = ?120 vdc, i e = 0, t a =100 c) ? ? 50 adc 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sotC 23 2 emitter 3 collector 1 base device marking and ordering information device marking shipping m mbt5401lt1 2l 3000/tape&reel feature ? 2012-11 willas electronic corp. mm bt5401lt1
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (2) dc current gain h fe ?? (i c = ?1.0madc, v ce = ?5.0 vdc) 50 ?? (i c = ?10 madc, v ce = ?5.0 vdc) 60 240 (i c = ?50 madc, v ce = ?5.0 vdc) 50 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ?? ? 0.2 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.5 base?emitter saturation voltage v be(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ?? ? 1.0 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 1.0 smallCsignal characteristics current?gain ? bandwidth product f t mhz (i c = ?10 madc, v ce = ?10 vdc, f = 100 mhz) 100 300 output capacitance c obo pf (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) ?? 6.0 small?signal current gain h fe ? (i c = ?1.0madc, v ce = ?10vdc, f = 1.0 khz) 40 200 noise figure n f db (i c = ?200 adc, v ce = ?5.0 vdc,r s =10 ? , f = 1.0 khz) ?? 8.0 2012-11 willas electronic corp. high voltage transistor mm bt5401lt1
v ce = ?1.0 v v ce = ?5.0 v i c , collector current (ma) figure 1. dc current gain t j =125c 25c ?55c 200 150 100 70 50 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 1 0 20 30 50 100 h fe , current gain 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 1 0 20 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 i c =1.0ma i b , base current (ma) figure 2. collector saturation region v be , base?emitter voltage (volts) figure 3. collector cutCoff region v ce , collector? emitter voltage (volts) i c , collector current ( a) 10ma 30 ma 100 ma v ce = 30 v i c = i ces t j = 125c 75c 25c reverse forward 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2012-11 willas electronic corp. high voltage transistor mm bt5401lt1
i c , collector current (ma) figure 4. on voltages v, voltage (volts) c, capacitance (pf) v , temperature coefficient (mv/ c) t, time (ns) i c , collector current (ma) figure 5. temperature coefficients figure 6. switching time test circuit v r , reverse voltage (volts) figure 7. capacitances i c , collector current (ma) figure 8. turnCon time i c , collector current (ma) figure 9. turnCoff time t, time (ns) t j =25c v ce(sat) @ i c /i b =10 t j =25c c ibo v be(sat) @ i c /i b =10 v bb 10 s input pulse v in +8.8 v r b 5.1 k 0.25 f v in 100 1n914 v out r c v cc ?30 v 3.0 k t r , t f < 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma t j = ?55c to 135c vc for v ce(sat) vb for v be(sat) c obo i c /i b = 10 t j = 25c t d @ v be(off) = 1.0v v cc = 120v t r @v cc = 30v t r @v cc = 120v t f @v cc = 120v t f @ v cc = 30v t s @v cc = 120v i c /i b =10 t j = 25c 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 1000 700 500 300 200 100 70 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 10.2v 100 2012-11 willas electronic corp. high voltage transistor mm bt5401lt1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012-11 willas electronic corp. high voltage transistor mm bt5401lt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
|
